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| AOD464 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOD464 is Pbfree (meets ROHS & Sony 259 specifications). AOD464L is a Green Product ordering option. AOD464 and AOD464L are electrically identical. TO-252 D-PAK Features VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 m (VGS =10V) @ 20A RDS(ON) < 31 m (VGS = 6V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 105 25 40 28 80 20 200 100 50 2.3 1.5 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 15 45 1 Max 18 55 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD464 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=6V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Conditions ID=10mA, VGS=0V VDS=84V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 2.5 80 21.5 32 24 50 0.73 1 55 2038 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 204 85 1.3 38.5 VGS=10V, VDS=50V, ID=20A 8 10 12.7 VGS=10V, VDS=50V, RL=2.7, RGEN=3 IF=20A, dI/dt=100A/s 8.2 31.5 11.2 59.6 161 74 1.56 46 2445 28 40 31 3.2 Min 105 1 5 100 4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July2005 Alpha & Omega Semiconductor, Ltd. AOD464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 80 6V 60 ID (A) ID(A) 15 125C 10 5V 20 VGS=4.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 40 2.4 2.2 Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 10 0 10 20 30 40 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 ID=20A 1.0E+01 50 125C RDS(ON) (m) IS (A) 40 1.0E+00 1.0E-01 25C 1.0E-02 30 1.0E-03 25C 20 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=6V,20A VGS=10V, 20A 0 2 2.5 3 3.5 4 4.5 5 5 25C 20 VDS=5V 25 40 VGS(Volts) Figure 2: Transfer Characteristics RDS(ON) (m) 30 VGS=6V 20 VGS=10V 1.0E+02 Alpha & Omega Semiconductor, Ltd. AOD464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 10 VDS=50V ID=20A Capacitance (nF) 2 8 VGS (Volts) Ciss 6 4 1 Coss Crss 2 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 TJ(Max)=175C, TA=25C 0 0 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 20 100 300 TJ(Max)=175C TA=25C 100 ID (Amps) 10 DC 100s 1ms, DC Power (W) RDS(ON) limited 10s 200 100 1 0.1 0.1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current 150 40 TA=150C 20 Power Dissipation (W) 0.001 tA = L ID BV - V DD TA=25C 100 50 0 0.000001 0 0.00001 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 100 80 Power (W) 60 40 20 40 Current rating ID(A) 30 20 10 0 0.01 0 25 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note B) 50 175 0.1 1 10 100 1000 0 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 100 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ZJA Normalized Transient Thermal Resistance 10 1 0.1 PD 0.01 Single Pulse Ton T 100 1000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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